Effect of MnO2 on Morphological and Electrical Properties for SnO2 Nanostructure Thin Films
DOI:
https://doi.org/10.24237/Keywords:
SnO2 film, Hall Effect, FE-SEM, doping effectAbstract
Using the technique of chemical spray pyrolysis,(SnO2) thin films doped with different ratios of (MnO2) (2%, 4%, 6%, 8%) were prepared and deposited on glass substrates at (350 ºC). The spectral analysis of the prepared films was done using a field emission scanning electron microscope, and electrical measurements were carried out to verify the prepared samples. FE-SEM measurements revealed inhomogeneous granular structures, where these groups are large. The size of these groups decreases with increasing doping ratio of (MnO2), and the reason for this decrease is the dispersion of manganese oxide (MnO2) particles within the crystal lattice of tin oxide (SnO2). Electrical measurements were used to determine the type and concentration of charge carriers and the Hall coefficient, conductivity, resistance, and mobility. The prepared films showed (n-type) charge carriers according to the Hall coefficient values, and this is due to the effect of temperature and impurities. An increase in the Hall coefficient values was also observed with the increasing doping ratio of manganese oxide (MnO2), reaching the highest value at a doping ratio of (6%), Conductivity also increased with increasing doping ratio, while mobility decreased with increasing doping ratio.
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